Inkjet Printed Single-Walled Carbon Nanotube Based Ambipolar and Unipolar Transistors for High-Performance Complementary Logic Circuits

摘要

Inkjet printed single walled carbon nanotubes (SWCNT) field-effect transistors with mobilities of 15 and 7 cm(2) V-1 s(-1) for holes and electrons, respectively, and high on-off ratio, are demonstrated. The high loading of the ink formulation and high electronic quality of the sorted SWCNT enable facile printing of networks displaying high coverage and effective mobility already after a single printing pass. Balanced ambipolarity or mainly unipolar behavior can be tuned by simply varying the number of printing passes, thus enabling the realization of high-performance complementary-like logic gates.